donor impurity
英 [ˈdəʊnə(r) ɪmˈpjʊərəti]
美 [ˈdoʊnər ɪmˈpjʊrəti]
施主杂质
双语例句
- The results show that the binding energies of shallow donor impurity states strongly depend not only on the wire radius, but also on the applied electric field and the impurity position in the wire.
结果表明杂质态结合能不只是量子线半径的函数，它还随杂质位置，外电场强度发生变化。 - Calculation of Energy and Binding Energy of Hydrogen-like Donor Impurity Quantum Ring with B-spline Technique
类氢施主杂质量子环能级和束缚能的B样条计算按可能引起污染的程度被定级设施 - Studies on property of shallow donor impurity in symmetrical double nanometer-wires under compressive stress
外加压力时双纳米线中浅施主杂质的性质 - The size-dependent effect of energy and binding energy of hydrogen-like donor impurity quantum ring are calculated with B-spline technique.
利用B样条技术计算类氢施主杂质量子环能级和束缚能的量子尺寸效应。 - A variational method is adopted to investigate the ground state binding energy of an electron bound to a donor impurity near the interface of a single semiconductor heterojunction by considering the modification of the dielectric constant within a continuous dielectric theory.
采用连续电介质理论计入对材料介电常数的修正，利用变分法讨论半导体单异质结中界面附近的单电子束缚于施主杂质的基态结合能。 - Effects of hydrogenic donor impurity position on the binding energy of a bound exciton in ⅲ-nitrides quantum dots
III族氮化物量子点中类氢施主杂质位置对束缚激子结合能的影响 - A variational method is used to investigate the ground state of an electron bound to a donor impurity near a single semiconductor heterojunction by considering the influence of a triangular potential and the screened Coulombic impurity potential. The screening effect is considered with the random phase approximation.
对半导体单异质结系统，引入三角势近似异质结势，考虑电子对杂质库仑势的屏蔽影响，利用变分法讨论在界面附近束缚于正施主杂质的单电子基态能量。 - At the late period of growth of colloidal particles, the concentration of donor atoms can be approximately represented by the critical concentration of impurity.
在胶粒生长后期，施主原子浓度可以近似地用杂质临界浓度表示。 - Binding Energy of Shallow Donor Impurity in CdTe/ ZnTe Strained Quantum Well
CdTe/ZnTe应变量子阱中的浅施主结合能 - The effect of donor impurity concentration on electrical characteristics and microstructure of PTC ceramics
施主掺杂浓度对PTC陶瓷材料导电性能和微观结构的影响 - The recent developments on the research for the TiO2 capacitor-varistor ceramics were reviewed in this paper, which contain donor impurity, acceptor impurity and sintering improver, and the evolution of it was forecast at the same time.
本文综述了TiO2电容-压敏陶瓷性能以及施主杂质、受主杂质、烧结助剂的研究现状，并对其进行了展望。 - The ground state energies of a shallow donor impurity near a sharp surface of a semi-infinite crystal are studied.
本文用变分法计算了半无限晶体近表面内浅态施主杂质的基态能量。 - Using a novel variational wave function for the ground state of the shallow donor in a narrow GaAs/ Ga_ ( 1-x) Al_xAs quantum-well, we have calculated the wave function and the binding energy for impurity ground state.
本文采用一种新的变分波函数描述GaAs/Ga（1-x）AlxAs窄量子阱中的浅施主基态，并计算了杂质基态波函数和结合能。 - The electrical characteristics and microstructure of BaTiO_3 PTC ceramics with. Nb donor impurity concentration 0.09-0.24mol% have been investigated.
本文研究了施主Nb掺杂BaTiO3PTC陶瓷的微观结构和导电性能。 - It is shown that the concentration of donor atoms is independent of the concentration of impurity.
本文先讨论施主原子浓度的特性，证明它与杂质浓度无关； - Donor Behavior of Nitrogen Impurity in Nitrogen-Doped CZ-Si
微氮直拉硅单晶中氮杂质的施主行为 - Firstly, hydrogen-like donor impurity states in symmetric triangular quantum wells are investigated by a variational method.
我们首先用变分法计算了对称三角形量子阱中的类氢杂质结合能。 - Chaos in the Anisotropic Donor Impurity in a Semiconductor Structures
半导体结构束缚下各向异性施主杂质中的混沌 - We analyze and discuss the calculation results in detail, which show that: ( 1) The ground state energy of the neutral donor impurity system and charged donor impurity system will oscillate ( A-B oscillation) with the change of magnetic flux.
得出的结果表明：（1）中性施主杂质体系和带负电施主杂质体系的基态能量都会随着磁通量的变化发生振荡，即A-B振荡。 - When the middle barrier layer width increases, the donor binding energy decreases with increasing the middle barrier layer width when the impurity is localized inside the middle barrier layer and the right dot.
但是当中间垒层宽度增加到一定程度，施主束缚能随着中间垒层宽度的增加变化不再明显。 - Moreover, the donor binding energy is larger when the impurity is located inside the left dot due to the effects of the strong built-in electric field.
此外强内建电场也造成当杂质位于左量子点时相应的施主束缚能比较大。并且在左量子点的中心位置施主束缚能会得到一个最大值。 - With increasing the dot height, the donor binding energy has a maximum value when the impurity located at the center of the left dot.
当杂质位于中间垒层和右量子点中时，施主束缚能会随着中间垒层宽度的增加而减小。 - We use a Gaussian well to imitate the effect of STM tip or donor impurity, and find it can focus the electron wave like lens focus light.
应用高斯型势阱模拟STM针尖势场或2DEG中施主杂质势场的作用，发现高斯势阱可以会聚电子波。